MarkE said,

Her scope shot tells me that her measurements are flamed out again as they have been in the past.  Put a $5000. oscilloscope in the hands of someone who doesn't understand what they are doing and the results are little better than if they had just drawn what they wanted to see on a $10. Etch-A-Sketch toy.

       
Actually.... her spurious "results" are much _worse_ than if they had actually used a 10 dollar Etch-a-Sketch. I've never actually seen anyone actually interpreting an actual Etch-a-Sketch drawing to indicate actual overunity performance! Actually (tm DM). Yet Ainslie happily sets up her scope and her measurements to repeat the spurious ringing and overshoot amplitudes and interprets them in her preferred fashion. There is no doubt a special circle of Hell for oscilloscope abusers and Ainslie is bound for the very center of it.

Ainslie has once again demonstrated that data which do not conform to her expectations and desires are eliminated from consideration.

 She cannot use the _actual_ "Standard Measurement Protocols" requiring proper Vbatt filtration or the proper _actually_ noninductive CSR arrangement or the proper Math display, because those things result in the actual disappearance of the "negative power product" upon which her silly claims actually depend. Actually (tm DM).

The Gate boost circuit is interesting. Ainslie, however, is using a considerable negative offset in her FG settings, even though the Q1 is only turned on by the positive portion of the signal.
What is really "anemic" is the turn-on time of the mosfet itself in response to the gate signal. It's not completely obvious from the traces shown above, but looking at the Drain trace makes it clear that the mosfet isn't really turning fully ON until the very end of the gate pulse.

The amplitude of the ringing is sensitive to the negative offset value, so I'm not sure what effect the Gate Boost circuit will have. But I'll be finding out before too much longer.... since I have 2n2222a and 2n3907 transistors in stock.

Meanwhile here's another screenshot, showing a bit more amplitude on the ringing. This is just regulated by the negative FG offset and the amplitude setting. I'm using about 20 v p-p with -15 to around +5 V amplitude. Again, the frequency and duty cycle measurements are thrown off by the ringing, but I've positioned the cursors so that the period of one cycle can be read.

  Koala or Mark,
               what's a CVR?
                      Thanks John..

CVR = current viewing resistor = CSR = current sense resistor, the terms are interchangeable. Ainslie calls this a "shunt" which is also sort of correct, although a real current-viewing shunt is generally a strip or block of metal or even just a short bit of wire with known low resistance.

I usually call it CVR since it allows viewing of the current. It doesn't really "sense" the current in my usual meaning of "sense". It simply produces a voltage drop across it in accordance with Ohm's Law; the oscilloscope "senses" this voltage drop. The scope/resistor system allows one to "View" the current in the circuit. I will generally use "cvr" but sometimes I may use "csr".

Yes, you are right. I didn't notice the tiny "tick" in the screen indicating the 0-ref line.

Rose usually has a large excursion ring-down; large enough that the bottom gets truncated as can be seen in her and my scope shots. You may not get the effect without the flyback diode.

Poor Ainslie must be in real pain. You guys have first ANALYSED her and now ANALISING her.  Have some mercy. 

Poor Ainslie must be in real pain. You guys have first ANALYSED her and now ANALISING her.  Have some mercy. 

She keeps crying out for "MOAR", though. When she remembers the Safety Word, maybe I'll stop.

 

The Gate boost circuit is interesting. Ainslie, however, is using a considerable negative offset in her FG settings, even though the Q1 is only turned on by the positive portion of the signal.
What is really "anemic" is the turn-on time of the mosfet itself in response to the gate signal. It's not completely obvious from the traces shown above, but looking at the Drain trace makes it clear that the mosfet isn't really turning fully ON until the very end of the gate pulse.

The amplitude of the ringing is sensitive to the negative offset value, so I'm not sure what effect the Gate Boost circuit will have. But I'll be finding out before too much longer.... since I have 2n2222a and 2n3907 transistors in stock.

Meanwhile here's another screenshot, showing a bit more amplitude on the ringing. This is just regulated by the negative FG offset and the amplitude setting. I'm using about 20 v p-p with -15 to around +5 V amplitude. Again, the frequency and duty cycle measurements are thrown off by the ringing, but I've positioned the cursors so that the period of one cycle can be read.

What you are seeing is the effects of discharging the gate capacitance faster.  The function generator has 50 Ohms in series with its output stage.  More negative drive increases the discharge current.  BTW you can string those two transistors across +18V and -18V and get nice fast turn on and turn off using the FG.  Or use them with +15V / 0V with a 555.